 English |
|
|
|
|
|
|
|
| ACE7400_12 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
| |||
|
ACE7400
N-Channel Enhancement Mode MOSFET
Description
The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss are needed in
a very small outline surface mount package.
Features
ï· 30V/2.8A, RDS(ON)=77mΩ@VGS=10V
ï· 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V
ï· 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· DC/DC Converter
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
2.8
A
2.3
Pulsed Drain Current
IDM
10 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25â
TA=70â
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
TJ
TSTG
RθJA
1.25 A
0.33
W
0.21
150 OC
-55/150 OC
100 OC/W
VER 1.3 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese