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| ACE7333M Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel 30-V (D-S) MOSFET | |||
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ACE7333M
P-Channel 30-V (D-S) MOSFET
Description
The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
ï· Low rDS(on) trench technology
ï· Low thermal impedance
ï· Fast switching speed
Applications
ï· White LED boost converters
ï· Automotive Systems
ï· Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
VDS (V)
-30
rDS(on) (mΩ)
20 @ VGS = -10V
36 @ VGS = -4.5V
ID(A)
-10.9
-8.1
Absolute Maximum Ratings
Parameter
Symbol Limit Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current a
TA=25 OC
TA=70 OC
-10.9
ID
-8.2 A
Pulse Drain Current b
IDM
-50
Continuous Drain Current (Diode Continuous) a
IS
-4.5 A
Power Dissipation a
TA=25 OC
TA=70 OC
3.5
PD
W
2
Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 OC
Parameter
Maximum Junction-to-Ambient a
tâ¦10sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
â/W
â/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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