ACE7331M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel 30-V MOSFET

ACE7331M
P-Channel 30-V MOSFET
Description
The ACE7331M utilize a high cell density trench process to provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
• Low r_DS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper lead frame DFN3x3-8L saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
T_A=25℃
T_A=70℃
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
T_A=25℃
T_A=70℃
Operating temperature / storage temperature
Symbol Limit Units
V_DS
-30
V
V_GS
±20
V
-13.4
I_D
A
-11.0
I_DM
±50 A
I_S
-2.1 A
3.5
P_D
W
2.0
T_J/T_STG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient ^a
t <= 10 sec
Steady State
R_θJA
Maximum
35
81
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1