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| ACE7310M Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel 30-V (D-S) MOSFET | |||
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ACE7310M
N-Channel 30-V (D-S) MOSFET
Description
The ACE7310M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a kelvin connection to the source, which may be used to bypass the source inductance.
Features
ï¬ Low rDS(on) trench technology
ï¬ Low thermal impedance
ï¬ Fast switching speed
Applications
ï¬ DC/DC Conversion
ï¬ Power Routing
ï¬ Motor Drives
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (mΩ)
5.5@ VGS = 10V
7.8 @ VGS = 4.5V
ID(A)
21
17
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulse Drain Current b
TA=25 OC
TA=70 OC
Continuous Drain Current (Diode Continuous) a
Power Dissipation a
TA=25 OC
TA=70 OC
Operating Junction and Storage Temperature Range
Symbol Limit Units
VDS
30
V
VGS
±20
V
21
ID
17.2
A
IDM
80
IS
4.7
A
3.5
PD
W
2
TJ,TSTG -55 to 150 OC
Parameter
Maximum Junction-to-Ambient a
tâ¦10sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
â/W
â/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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