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| ACE6604B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Power MOSFET | |||
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ACE6604B
N-Channel Enhancement Mode Power MOSFET
Description
ACE6604B uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features
ï¬ VDS= 60V , ID=85A
ï¬ RDS(ON)@ VGS = 10V , TYP= 4.6mâ¦
ï¬ RDS(ON)@ VGS = 4.5V , TYP= 5.3mâ¦
Absolute Maximum Ratings@TA=25â unless otherwise noted
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25â
TA=100â
ID
85
A
54
Drain Current (Pulsed)*B
Power Dissipation
IDM
TA=25â
PD
340
A
135
W
Operating temperature / Storage temperature
TJ/TSTG
-55~150
â
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t⤠10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP
VER 1.1 1
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