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| ACE6428B Datasheet, PDF (1/8 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE6428B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
ï· VDS(V)=30V
ï· ID=43A (VGS=10V)
ï· RDS(ON)ï¼10mΩ (VGS=10V)
ï· RDS(ON)ï¼14.5mΩ (VGS=4.5V)
ï· 100% Delta Vsd Tested
ï· 100% Rg Tested
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous) TA=25 OC
TA=100 OC
ID
43
27
A
Drain Current (Pulse) C
IDM
80
TA=25 OC
Drain Current (Continuous) TA=70 OC IDSM
11
A
8
Power Dissipation B
TA=25 OC
TA=100 OC
PD
30
W
12
Power Dissipation A
TA=25 OC
TA=70 OC
PDSM
2
W
1.3
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient A
tâ¦10s
Maximum Junction-to-Ambient A D Steady-State RθJA
21 25 â/W
50 60 â/W
Maximum Junction-to-Case Steady-State RθJC 3.5 4.2 â/W
VER 1.2 1
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