ACE636B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – Common Drain Dual N-Channel Enhancement Mode Field Effect

ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
Description
Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High
Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface
Mount Package
Features
 V_DS 20V, I_D =6A
 R_DS(ON)=22mΩ @V_GS=4.5V
 R_DS(ON)=30mΩ @V_GS=2.5V
 For a single mosfet
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
20 V
Gate-Source Voltage
V_GSS ±12 V
Drain Current (Note 1), Continuous
I_D
6A
Total Power Dissipation (Note1)
P_D 650 mW
Operating and Storage Temperature Range T_J/T_STG -55/150 ^OC
Note: Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Packaging Type
SOT-23-6L
VER 1.2 1