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| ACE634 Datasheet, PDF (1/9 Pages) ACE Technology Co., LTD. – 20V Complementary Enhancement Mode Field Effect Transistor | |||
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ACE634
20V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE634 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
ï· N-Channel
VDS(V)=20V
ID=4A
RDS(ON)
<35mΩ (VGS=4.5V)
<42mΩ (VGS=2.5V)
ï· P-Channel
VDS(V)=-20V
ID=-2.5A
RDS(ON)
<85mΩ (VGS=-4.5V)
<115mΩ (VGS=-2.5V)
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Typical
Symbol
Unit
N-Channel P-Channel
Drain-Source Voltage
VDSS
20
-20
V
Gate-Source Voltage
VGSS
±12
Continuous Drain Current (TJ=150â) TA=25â
*AC
TA=70â
ID
4
3.2
±12 V
-2.5
A
-2
Drain Current (pulse) * B
Power Dissipation
TA=25â
TA=70â
Operating Junction Temperature
Storage Temperature Range
IDM
PD
TJ
TSTG
13
-13
A
1.1
1.1
W
0.7
0.7
-55 to 150
OC
-55 to 150
OC
VER 1.2 1
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