 English |
|
|
|
|
|
|
|
| ACE633 Datasheet, PDF (1/10 Pages) ACE Technology Co., LTD. – 60V Complementary Enhancement Mode Field Effect Transistor | |||
| |||
|
ACE633
60V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
ï· N-Channel
VDS(V)=60V
ID=5A
RDS(ON)
<35mΩ (VGS=10V)
<40mΩ (VGS=4.5V)
ï· P-Channel
VDS(V)=-60V
ID=-3.5A
RDS(ON)
<75mΩ (VGS=-10V)
<90mΩ (VGS=-4.5V)
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Typical
Symbol
Unit
N-Channel P-Channel
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (TJ=150â) TA=25â
*AC
TA=70â
ID
5
4
-60 V
±20 V
-3.5
A
-2.8
Drain Current (pulse) * B
IDM
Power Dissipation
TA=25â
TA=70â
PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
22
-22 A
2
2
W
1.3
1.3
-55 to 150
OC
-55 to 150
OC
VER 1.2 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese