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| ACE632 Datasheet, PDF (1/11 Pages) ACE Technology Co., LTD. – The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. | |||
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ACE632
N&P Pair Enhancement Mode MOSFET
Description
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features
ï· N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
ï· P-Channel
-20V/1.0A,RDS(ON)= 520mΩ@VGS=-4.5V
-20V/0.8A,RDS(ON)= 700mΩ@VGS=-2.5V
-20V/0.7A,RDS(ON)= 950mΩ@VGS=-1.8V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· DC/DC Converter
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150â)
Pulsed Drain Current1)
TA=25â
TA=80â
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25â
TA=70â
Typical
Symbol
Unit
N-Channel P-Channel
VDS
20
-20
V
VGS
±12
1.2
ID
0.9
±12
V
-1.0
A
-0.7
IDM
4
-3
A
IS
0.6
-0.6
0.3
PD
W
0.19
VER 1.3 1
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