ACE5830 Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – DFNWB2X2-6L N-Channel MOSFETS

ACE5830
DFNWB2X2-6L N-Channel MOSFETS
Description
DFNWB2×2-6L parts are shipped in tape . The carrier tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily
composed of polyester film, adhesive layer, sealant, and anti–static sprayed agent . These reeled parts in
standard option are shipped with 3,000 units per 7” or 18.0cm diameter reel . The reels are clear in color
and is made of polystyrene plastic(anti-static coated).
Features
• Trench FET Power MOSFET
• Low R_DS(ON)
• Typical ESD Protection
Applications
• Ideal for Load Swith and Battery
• Protection Applications
Absolute Maximum Ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
*Repetitive rating：Pluse width limited by junction temperature.
Packaging Type
DFNWB2*2-6L
N-Channel
Symbol
VDS
VGS
ID
IDM*
RθJA
TJ
TSTG
Value
30
±10
5
20
250
150
-55~+150
Unit
V
V
A
A
℃/W
℃
℃
VER 1.1 1