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ACE5801 Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Power MOSFET
ACE5801
P-Channel Power MOSFET
Description
The ACE5801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltage.
. This device is suitable for use as a load switching application and a wide variety of other applications.
Features
• Advanced trench MOSFET process technology
• Ultra low on-resistance with low gate charge
Applications
• PWM application
• Load switch
• Battery charge in cellular handset
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Drain Current-Continuous
Drain Current-Pulsed (note 1)
ID
-16
A
IDM
-65
Power Dissipation (note 2, TA=25℃)
Maximum Power Dissipation (note 3, TC=25℃)
2.5
PD
W
18
Thermal Resistance from Junction to Ambient (note 4) RθJA
Thermal Resistance from Junction to case (note 4) RθJC
50
℃/W
6.9
Junction Temperature
Storage Temperature
TJ
150
℃
TSTG -55~150
Packaging Type
DFNWB2*2-6L
VER 1.2 1