ACE5213A Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET

ACE5213A
P-Channel Enhancement Mode MOSFET
Description
The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high density process is especially tailored to minimize
on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
• P-Channel
-20V/0.45A,R_DS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,R_DS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,R_DS(ON)= 0.95Ω@VGS=-1.8V
• Super high density cell design for extremely low R_{DS (ON)}
• Exceptional on-resistance and maximum DC current capability
Application
• Drivers : Relays/Solenoids/Lamps/Hammers
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS -20 V
Gate-Source Voltage
V_GSS ±12 V
Continuous
Drain
Current
(T_J=150℃)
T_A=25℃
T_A=70℃
I_D
-0.45
A
-0.35
Pulsed Drain Current
I_DM -1.0 A
Continuous Source Current (Diode Conduction) I_S -0.3 A
Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
P_D
T_J
T_STG
0.27
W
0.16
-55/150 ^OC
-55/150 ^OC
VER 1.1 1