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| ACE5212A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE5212A
N-Channel Enhancement Mode MOSFET
Description
The ACE5212A is the N-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior
switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
⢠20V/0.65A, RDS(ON)=380mΩ@VGS=4.5V
⢠20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
⢠20V/0.45A, RDS(ON) =800mΩ@VGS=1.8V
⢠Super high density cell design for extremely low RDS (ON)
⢠Exceptional on-resistance and maximum DC current capability
Application
⢠Drivers : Relays/Solenoids/Lamps/Hammers
⢠Power Supply Converter Circuits
⢠Load/Power Switching Cell Phones, Pagers
VER 1.1 1
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