ACE5208 Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Power MOSFET

ACE5208
P-Channel Power MOSFET
Description
The ACE5208 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with low gate voltage.
This device is suitable for use as a load switching application and a wide variety of other applications.
Features
• Advanced trench MOSFET process technology
• Ultra low on-resistance with low gate charge
Applications
• PWM application
• Load switch
• Battery charge in cellular handset
Absolute Maximum Ratings
Parameter
Symb
ol
Max
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
-12
V
V_GS
±8
Drain Current-Continuous
Drain Current-Pulsed (note 1)
I_D
-6
A
I_DM
-20
Power Dissipation (note 2, T_A=25℃)
Maximum Power Dissipation (note 3, T_C=25℃)
P_D
1.5
W
12
Thermal Resistance from Junction to Ambient (note 4) R_θJA
Thermal Resistance from Junction to case (note 4) R_θJC
83.3
℃/W
10.4
Junction Temperature
Storage Temperature
T_J
150
℃
T_STG -55~+150
Packaging Type
VER 1.1 1