ACE4953B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Dual P-Channel Enhancement Mode Field Effect Transistor

ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
 VDS(V)=-20V
 I_D=-5.5A (V_GS=-10V)
 RDS(ON)<55mΩ (V_GS=-10V)
 RDS(ON)<58mΩ (V_GS=-4.5V)
 RDS(ON)<80mΩ (V_GS=-2.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC ^{TA=25 OC}
T_A=70 ^OC
V_DSS
V_GSS
I_D
-20 V
±12 V
-5.5
A
-4.4
Drain Current (Pulse) * B
I_DM
-25 A
Power Dissipation
T_A=25 ^OC
T_A=70 ^OC
P_D
2
W
1.5
Operating and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Packaging Type
SOP-8
VER 1.2 1