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| ACE4922 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode MOSFET | |||
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ACE4922
Dual N-Channel Enhancement Mode MOSFET
Description
The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features
ï· N-Channel
20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· DC/DC Converter
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=80â
ID
1.2
A
0.9
Pulsed Drain Current
IDM
4A
Continuous Source Current (Diode Conduction) IS
0.6 A
Power Dissipation
TA=25â
TA=70â
PD
0.35
W
0.19
Operating Junction Temperature
TJ -55/150 OC
Storage Temperature Range
TSTG -55/150 OC
VER 1.3 1
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