ACE4908A Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – Dual P-Channel Enhancement Mode MOSFET

ACE4908A
Dual P-Channel Enhancement Mode MOSFET
Description
The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
• P-Channel
-20V/1.0A,R_{DS (ON)}= 520mΩ@VGS=-4.5V
-20V/0.8A,R_{DS (ON)}= 700mΩ@VGS=-2.5V
-20V/0.7A,R_{DS (ON)}= 950mΩ@VGS=-1.8V
• Super high density cell design for extremely low R_{DS (ON)}
• Exceptional on-resistance and maximum DC current capability
APPLICATIONS
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
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