ACE4884 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE4884
N-Channel Enhancement Mode MOSFET
Description
The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced
using high cell density , DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching , low in-line power loss, and resistance to transients are
needed.
Features
 N-Channel
40V/10A,RDS(ON)= 20mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 24mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 30mΩ@VGS= 2.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOP – 8P package design
APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter
Absolute Maximum Ratings
TA=25℃ Unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T_J=150℃) ^TA=25℃
T_A=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
T_A=25℃
T_A=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to
Ambient
T ≤ 10sec
Steady State
VGSS
I_D
I_DM
Is
P_D
T_J
T_STG
R_θJA
Typical
40
±20
10.0
8.0
25
2.3
2.5
1.6
-55/150
-55/150
50
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
VER 1.1 1