ACE4835M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel 30-V MOSFET

ACE4835M
P-Channel 30-V MOSFET
Description
The ACE4835M uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
T_A=25℃
T_A=70℃
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation ^a
T_A=25℃
T_A=70℃
Operating temperature / storage temperature
Symbol Limit Units
V_DS
-30
V
V_GS
±20
V
-9.5
I_D
A
-8.3
I_DM
-50
A
I_S
-4
A
3.1
P_D
W
2.2
T_J/T_STG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient ^a
t <= 10 sec
Steady State
R_θJA
Maximum
40
80
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1