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| ACE4826B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode MOSFET | |||
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ACE4826B
Dual N-Channel Enhancement Mode MOSFET
Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is suitable for use as a
load switch, power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter
Systems.
Features
ï· VDS 60V, VGS 20V, ID 5.5A
ï· RDS(ON)@10V, 30mΩ (typ.)
ï· RDS(ON)@4.5V, 35mΩ (typ.)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
VGSS ±20 V
Drain Current - Continuous
ID
5.5 A
Total Power Dissipation (Note1,2)
PD
1W
Operating and Storage Junction Temperature Range TJ/TSTG -55/150 OC
Note: 1. Surface Mounted on 1in pad area, t â¤10sec.
2. Rating for a single chip.
Packaging Type
SOP-8
VER 1.2 1
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