ACE4710B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET with Schottky Diode

ACE4710B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Description
ACE4710B combines a P-Channel enhancement mode power MOSFET which is produced with high cell
density and DMOS trench technology and a low forward voltage schottky diode. This device particularly
suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB
consumption.
Features
MOSFET
 V_DS(V)=-20V
 I_D=-4A
 R_DS(ON)@-4.5V, 58mΩ (Typ.)
 R_DS(ON)@-2.5V, 76mΩ (Typ.)
 R_DS(ON)@-1.8V, 97mΩ (Typ.)
Schottky
 VR 20V
 IF 2A
 VF@1A<430mV
Application
 Li Battery Charging
 High Side DC/DC Converter
 High Side Driver for Brushless DC Motor
 Power Management in Portable, Battery Powered Devices
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
-20
V
V_GSS
±8
V
Drain Current (Continuous)
Continuous
Pulsed
I_D
-4
A
-25
Schottky Reverse Voltage
V_R
20 V
Schottky Continuous Forward Current
Power Dissipation Derating above T_A=25 ^OC ^{(Note 1)}
Operating and Storage Temperature Range
I_F
2
A
P_D
1.5 W
T_J,T_STG -55 to 150 ^OC
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
VER 1.2 1