ACE4614B Datasheet, PDF (1/9 Pages) ACE Technology Co., LTD. – 30V Complementary Enhancement Mode Field Effect Transistor

ACE4614B
30V Complementary Enhancement Mode Field Effect Transistor
Description
The ACE4614B uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used in inverter and other applications.
Features
N-channel
 V_DS=30V
 I_D=9A
 R_DS(ON)<14mΩ(V_GS=10V)
 R_DS(ON)<22mΩ(V_GS=4.5V)
P-channel
 V_DS=-30V
 I_D=-8A
 R_DS(ON)<20mΩ(V_GS=-10V)
 R_DS(ON)<35mΩ(V_GS=-4.5V)
Absolute Maximum Ratings
Parameter
Symbol N-channel P-channel Unit
Drain-Source Voltage
V_DSS
30
Gate-Source Voltage
V_GSS
±20
Drain Current (Continuous) * AC ^{TA=25 OC}
T_A=70 ^OC
I_D
9
7.2
-30 V
±20 V
-8
-6.4 A
Drain Current (Pulse) * B
I_DM
40
-40
Power Dissipation
T_A=25 ^OC
T_A=70 ^OC
P_D
2
1.3
2
W
1.3
Operating and Storage Temperature Range T_J,T_STG -55 to 150 -55 to 150 ^OC
Packaging Type
SOP-8
VER 1.2 1