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ACE4613B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Complementary Enhancement Mode Field Effect Transistor | |||
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ACE4613B
Complementary Enhancement Mode Field Effect Transistor
Description
The ACE4613B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
applications.
Features
N-channel
ï· VDS=30V
ï· ID=7A
P-channel
ï· VDS=-30V
ï· ID=-6A
Absolute Maximum Ratings
Parameter
Symbol N-channel P-channel Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
30
VGSS
±20
-30 V
±20 V
Continuous Drain Current (Note 1)
ID
7
Pulse Drain Current (Note 2)
IDM
30
-6
A
-30
Total Power Dissipation (Note 1)
PD
1
1
W
Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 OC
Packaging Type
SOP-8
VER 1.2 1
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