ACE4612B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Complementary Enhancement Mode Field Effect Transistor

ACE4612B
Complementary Enhancement Mode Field Effect Transistor
Description
ACE4612B uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
applications.
Features
N-channel
 V_DS=30V
 V_GS=20V
 I_D=6A
P-channel
 V_DS=-30V
 V_GS=20V
 I_D=-4A
Absolute Maximum Ratings
Parameter
Symbol N-channel P-channel Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
30
V_GSS
±20
-30 V
±20 V
Continuous Drain Current (Note 1)
I_D
6
Pulse Drain Current (Note 2)
I_DM
30
-4
A
-30
Total Power Dissipation (Note 1)
P_D
1
1
W
Operating and Storage Temperature Range T_J,T_STG -55 to 150 -55 to 150 ^OC
Packaging Type
SOP-8
VER 1.2 1