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| ACE4490M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 100-V MOSFET | |||
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ACE4490M
N-Channel 100-V MOSFET
Description
The ACE4490M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Applications
⢠PoE Power Sourcing Equipment
⢠PoE Powered Devices
⢠Telecom DC/DC converters
⢠White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25â
TA=70â
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25â
TA=70â
Operating temperature / storage temperature
Symbol Limit Units
VDS
100
V
VGS
±20
V
5.2
ID
A
4.4
IDM
50
A
IS
3
A
3.1
PD
W
2.2
TJ/TSTG -55~150 â
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
40
80
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
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