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| ACE4468B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE4468B
N-Channel Enhancement Mode MOSFET
Description
The ACE4468B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
-RoHS Compliant
Features
⢠VDS (V)=30V
⢠ID=11.6A (VGS=10V)
⢠RDS(ON)<14mΩ (VGS=10V)
⢠RDS(ON)<22mΩ (VGS=4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC TA=25â
TA=70â
Drain Current (Pulsed)*B
Power Dissipation
TA=25â
TA=70â
Operating temperature / storage temperature
Symbol Max Unit
VDSS
30 V
VGSS ±20 V
11.6
ID
A
9.2
IDM
50 A
3
PD
W
2
TJ/TSTG -55~150 â
Packaging Type
SOP-8
Ordering information
ACE4468BFM + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.1 1
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