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| ACE4446B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a kelvin connection to the source, which may be used to bypass the source inductance.
Features
ï· VDS(V)=30V
ï· ID=15A (VGS=10V)
ï· RDS(ON)ï¼8.5mΩ (VGS=10V)
ï· RDS(ON)ï¼13mΩ (VGS=4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
TA=25 OC
TA=70 OC
Drain Current (Pulse) *B
Power Dissipation
TA=25 OC
TA=70 OC
Operating and Storage Temperature Range
Packaging Type
DFN3*3-8L
Symbol Max Unit
VDSS
VGSS
30
V
±20 V
15
ID
12
A
IDM
50
3.5
PD
W
2
TJ,TSTG -55 to 150 OC
VER 1.2 1
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