ACE4444B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor

ACE4444B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4444B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
 V_DS(V)=30V
 I_D=20A (V_GS=10V)
 R_DS(ON)＜5.5mΩ (V_GS=10V)
 R_DS(ON)＜8.5mΩ (V_GS=4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) *AC
T_A=25 ^OC
T_A=70 ^OC
Drain Current (Pulse) *B
Power Dissipation
T_A=25 ^OC
T_A=70 ^OC
Operating and Storage Temperature Range
Packaging Type
SOP-8
Symbol Max Unit
V_DSS
V_GSS
30
V
±20 V
20
I_D
17
A
I_DM
80
3
P_D
W
2.1
T_J,T_STG -55 to 150 ^OC
VER 1.2 1