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| ACE4442B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE4442B
N-Channel Enhancement Mode MOSFET
Description
The ACE4442B combines advanced trench MOSFET technology with a low resistance package to
provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,
Pagers.
Features
ï· VDS=20V
ï· ID=0.7A
ï· RDS(ON)<360mΩ (VGS=4.5V)
ï· RDS(ON)<420mΩ (VGS=2.5V)
ï· RDS(ON)<560mΩ (VGS=1.8V)
ï· ESD Protected
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
Drain Current (Continuous)
TA=25â
TA=70â
VGSS ±12 V
0.7
ID
A
0.56
Drain Current (Pulsed)
Power Dissipation
TA=25â
TA=70â
IDM
1A
0.27
PD
W
0.16
Operating temperature / storage temperature TJ/TSTG -55~150 â
Packaging Type
SOT-523
VER 1.2 1
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