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| ACE4440B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE4440B
N-Channel Enhancement Mode MOSFET
Description
The ACE4440B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
ï· VDS=60V
ï· ID=6A (VGS=10V)
ï· RDS(ON)<35mΩ (VGS=10V)
ï· RDS(ON)<40mΩ (VGS=4.5V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
Drain Current (Continuous)
TA=25â
TA=70â
VGSS
ID
±20 V
6
A
4.8
Drain Current (Pulsed)
Power Dissipation
TA=25â
TA=70â
Operating temperature / storage temperature
IDM
30 A
3
PD
W
2
TJ/TSTG -55~150 â
Packaging Type
SOP-8
Ordering information
ACE4440B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2 1
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