ACE4410M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel 30-V MOSFET

ACE4410M
N-Channel 30-V MOSFET
Description
The ACE4410M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
• Low r_DS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe
• SOP8 saves board space
• Fast switching speed
• High performance trench technology
Absolute Maximum Ratings
Parameter
Symbol Limit Units
Drain-Source Voltage
V_DS
30
V
Gate-Source Voltage
V_GS
±20
V
Continuous Drain Current ^a
T_A=25^OC
T_A=70 ^OC
13
I_D
11
A
Pulse Drain Current ^b
I_DM
50
Continuous Drain Current (Diode Continuous) ^a
I_s
2.3
A
Power Dissipation ^a
T_A=25^OC
T_A=70 ^OC
3.1
P_D
W
2.2
Operating Junction and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Parameter
Maximum Junction-to-Case ^a
Maximum Junction-to-Ambient ^a
t≦5sec
t≦5sec
Symbol
R_θJC
R_θJA
Maximum
25
50
Units
℃/W
℃/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1