ACE4409B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE4409B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4409B uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
 V_DS(V)=-30V
 I_D=-14A (V_GS=-10V)
 R_DS(ON)＜11mΩ (V_GS=-10V)
 R_DS(ON)＜13mΩ (V_GS=-4.5V)
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC
T_A=25 ^OC
T_A=70 ^OC
Drain Current (Pulse) * B
Power Dissipation
T_A=25 ^OC
T_A=70 ^OC
Operating and Storage Temperature Range
Packaging Type
SOP-8
Symbol Max Unit
V_DS
-30 V
V_GS
±20 V
-14
I_D
-11 A
I_DM
-70
3
P_D
W
2.1
T_J,T_STG -55 to 150 ^OC
Ordering information
ACE4409B XX + H
Halogen - free
Pb - free
FM : SOP-8
VER 1.2 1