|
ACE3926E Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – Dual N-Channel 20-V MOSFET | |||
|
ACE3926E
Dual N-Channel 20-V MOSFET
Description
The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Features
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Applications
⢠Power Routing
⢠Li Ion Battery Packs
⢠Level Shifting and Driver Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
TA=25â
TA=70â
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25â
TA=70â
Operating temperature / storage temperature
Symbol Limit Units
VDS
20
V
VGS
±12
V
13
ID
A
10
IDM
50
A
IS
7
A
2.5
PD
W
1.5
TJ/TSTG -55~150 â
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
83
120
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
|
▷ |