ACE3422B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor

ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE3422B uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Features
 V_DS(V)=60V
 I_D=2.6A
 R_DS(ON)=82mΩ (typ.) @V_GS=10V
 R_DS(ON)=96mΩ (typ.) @V_GS=4.5V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
60 V
Gate-Source Voltage
Drain Current (Continuous)
T_A=25 ^OC
T_A=70 ^OC
V_GSS
I_D
±20 V
2.6
A
2.1
Drain Current (Pulse)
I_DM
10 A
Power Dissipation
T_A=25 ^OC
T_A=70 ^OC
P_D
1
W
0.7
Operating Temperature / Storage Temperature T_J/T_STG -55/150 ^OC
Packaging Type
SOT-23-3
Ordering information
ACE3422B XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.3 1