 English |
|
|
|
|
|
|
|
| ACE3413_12 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
| |||
|
ACE3413
P-Channel Enhancement Mode MOSFET
Description
The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
ï· -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V
ï· -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V
ï· -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
-3.5
A
-2.8
Pulsed Drain Current
IDM
-15 A
Continuous Source Current (Diode Conduction) IS
-1.4 A
Power Dissipation
TA=25â
TA=70â
PD
1.25
W
0.8
Operating Junction Temperature
TJ -55/150 â
Storage Temperature Range
TSTG -55/150 â
Thermal Resistance-Junction to Ambient
RθJA 105 â/W
VER 1.4 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese