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ACE3413 Datasheet, PDF (1/8 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode MOSFET | |||
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ACE3413
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
⢠-20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V
⢠-20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V
⢠-20V/-1.7A, RDS(ON)=145mâ¦@VGS=-1.8V
⢠-20V/-1.0A, RDS(ON)=210mâ¦@VGS=-1.25V
⢠Super high density cell design for extremely low RDS(ON)
⢠Exceptional on-resistance and maximum DC current capability
⢠SOT-23-3L package design
Application
⢠Power Management in Note book
⢠Portable Equipment
⢠Battery Powered System
⢠Load Switch
⢠DSC
⢠LCD Display inverter
Absolute Maximum Ratings
(TA=25â Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -20 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
-3.5
A
-2.8
Pulsed Drain Current
IDM
-15 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25â
TA=70â
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
TJ
TSTG
RθJA
-1.4 A
1.25
W
0.8
-55/150 â
-55/150 â
150 â/W
VER 1.2 1
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