ACE3401D Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE3401D
P-Channel Enhancement Mode Field Effect Transistor
Description
This device is particularly suited for low voltage application such as portable equipment, power
management and other battery powered circuits, and low in-line power dissipation are needed in a very
small outline surface mount package Excellent thermal and electrical capabilities.
Features
 VDS(V)=-30V, I_D=-3A
 RDS(ON)<63mΩ @ V_GS=-10V
 Voltage controlled p-channel small signal switch
 High density cell design for low R_DS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
T_A=25 ^OC
T_A=70 ^OC
V_DSS
-30 V
V_GSS
±12
V
-3
I_D
A
-2.4
Drain Current (Pulse)
I_DM
-30 A
Continuous Power Dissipation
P_D
500 mW
Operating and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Packaging Type
SOT-23-3L
3
1
2
SOT-23-3
1
2
3
Description
Gate
Source
Drain
Ordering information
D
G
S
ACE3401D XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.2 1