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| ACE3400_12 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE3400
N-Channel Enhancement Mode MOSFET
Description
The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
ï· 30V/5.4A, RDS(ON)=38mΩ@VGS=10V
ï· 30V/4.6A, RDS(ON)=42mΩ@VGS=4.5V
ï· 30V/3.8A, RDS(ON)=55mΩ@VGS=2.5V
ï· Super high density cell design for extremely low RDS(ON)
ï· Exceptional on-resistance and maximum DC current capability
Application
ï· Power Management in Note book
ï· Portable Equipment
ï· Battery Powered System
ï· DC/DC Converter
ï· Load Switch
ï· DSC
ï· LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
4.5
A
3.5
Pulsed Drain Current
IDM
25 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25â
TA=70â
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
TJ
TSTG
RθJA
1.7 A
2.0
W
1.3
150 OC
-55/150 OC
90 OC/W
VER 1.4 1
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