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| ACE3400B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE3400B
N-Channel Enhancement Mode MOSFET
Description
The ACE3400BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge
low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load
switch or in PWM applications.
Features
ï· VDS 30V
ï· RDS(ON)@VGS=10V, IDS=5.2A, Typ 24mΩ
ï· RDS(ON)@VGS=4.5V, IDS=5A, Typ 27mΩ
ï· Fast switching speed
ï· Low threshold voltage (0.8V) makes this device ideal for portable equipment
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
VGSS
±12 V
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
ID
5.2
A
IDM
30
Power Dissipation (Note 1)
PD
1
W
Operating and storage junction temperature range TJ,TSTG -55~+150 â
Packaging Type
SOT-23-3L
3
SOT-23-3L Description Function
1
G
Gate
2
S
Source
3
D
Drain
1
2
VER 1.2 1
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