ACE3006M Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE3006M
N-Channel Enhancement Mode MOSFET
Description
ACE3006M uses advanced trench technology to provide excellent R_DS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
• Low r_DS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=25°C
Pulsed Drain Current ^b
Continuous Source Current (Diode Conduction) ^a
Power Dissipation
T_C=25°C
Operating Junction and Storage Temperature Range
Symbol Limit Unit
V_DS
60
V
V_GS
±20
I_D
30
A
I_DM
100
I_S
30
A
P_D
50
W
T_J, T_stg -55 to 175 °C
VER 1.1 1