ACE2N7002BM Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor

ACE2N7002
N-Channel Enhancement Mode Field Effect Transistor
Features
 Low On-Resistance
 Fast Switching Speed
 Low-voltage drive
 Easily designed drive circuits
 We declare that the material of product is ROHS compliant.
 ESD ProtectedL2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
60
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current(Continuous) T_A=25 ^OC
I_D
250
m^A
Drain Current(Pulse)
I_DM*1
1.6
A
Power Dissipation
T_A=25 ^OC
P_D
1.4 mW
Operating Temperature/Storage Temperature T_J,T_STG -55 to 150 ^OC
*Pw≦10μs, Duty cycle ≦ 1%
*When mounted on a 1*0.75*0.062 inch glass epoxy board%
Packaging Type
SOT-23-3
3
1
2
SOT-23-3
1
2
3
Description
Gate
Source
Drain
Ordering information
ACE2N7002 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.1 1