ACE2N7002A Datasheet, PDF (1/9 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET

ACE2N7002A
N-Channel Enhancement Mode MOSFET
Description
The ACE2N7002A is the N-Channel enhancement mode field effect transistors are produced using
high cell density DMOS technology. These products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as small servo motor control, power MOSFET gate
drivers, and other switching applications.
Features
 60V/0.50A , R_DS(ON)= 6.0Ω@V_GS=10V
 60V/0.30A , R_DS(ON)= 7.0Ω@V_GS=5V
 Super high density cell design for extremely low R_{DS (ON)}
 Exceptional on-resistance and maximum DC current capability
 TSOT-23-3 and SOT-323 package design
Applications
 Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
 High saturation current capability. Direct Logic-Level Interface: TTL/CMOS
 Battery Operated Systems
 Solid-State Relays
Absolute Maximum Ratings
(T_A=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate –Source Voltage - Non Repetitive ( tp < 50μs)
Continuous Drain Current (T_J=150℃)
T_A=25℃
Pulsed Drain Current(*)
Power Dissipation
Operating Junction Temperature
T_A=25℃
Storage Temperature Range
Thermal Resistance-Junction to Ambient
(*) Pulse width limited by safe operating area
Symbol
V_DSS
V_GSS
V_GSS
I_D
I_DM
P_D
T_J
T_STG
R_θJA
Typical
60
±20
±40
0.5
1.0
0.35
-55~150
-55~150
375
Unit
V
V
V
A
A
A
W
O_C
O_{C /W}
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