ACE2607B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor

ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits for low voltage application such as portable
equipment, power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
 V_DS(V)=-30V, I_D=-3.5A
 R_DS(ON)=52mΩ@V_GS=-10V
 R_DS(ON)=68mΩ@V_GS=-4.5V
 High density cell design for low R_DS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DSS
-30 V
Gate-Source Voltage
V_GSS
±20
V
Drain Current (Note 1) ^{Continuous TA=25℃}
Pulse (Note 2)
I_D
-3.5
A
-20
Power Dissipation⁽¹⁾ (Note 1)
P_D
650 mW
Operating and Storage Temperature Range T_J,T_STG -55 to 150 ^OC
Packaging Type
SOT-23-6L
1
VER 1.3 1