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| ACE2600B Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection | |||
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ACE2600B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD
protected.
Features
ï· VDS(V)=20V
ï· ID=6A (VGS=4.5V)
ï· RDS(ON)ï¼22mΩ (VGS=4.5V)
ï· RDS(ON)ï¼26mΩ (VGS=2.5V)
ï· RDS(ON)ï¼34mΩ (VGS=1.8V)
ï· ESD Protected: 2000V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous) * AC TA=25 OC
TA=70 OC
VDSS
VGSS
ID
20
V
±8
V
6
4.8 A
Drain Current (Pulse) * B
IDM
30
Power Dissipation
TA=25 OC
TA=70 OC
PD
1.3
W
0.8
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
VER 1.2 1
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