ACE2310C Datasheet, PDF (1/6 Pages) ACE Technology Co., LTD. – Plastic-Encapsulate MOSFET

ACE2310C
Plastic-Encapsulate MOSFET
Description
The ACE2310C uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in
other switching application.
Features
• High power and current handing capability
• Lead free product is acquired
• Surface mount package
Applications
• Battery Switch
• DC/DC Converter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
V_DS
60 V
Gate-Source Voltage
V_GS
±20 V
Continuous Drain Current
I_D
3A
Pulsed Drain Current (note 1)
I_DM
10 A
Power Dissipation
P_D 0.35 W
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
R_θJA
T_J
T_STG
357 ℃/W
150
℃
-55~150
Packaging Type
SOT-23-3
Equivalent Circuit
Ordering information
ACE2310C XX + H
Halogen - free
Pb - free
BM:SOT-23-3
VER 1.1 1