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| ACE2304 Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode MOSFET | |||
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ACE2304
Technology N-Channel Enhancement Mode MOSFET
Description
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
⢠30V/3.2A, RDS(ON)=65mâ¦@VGS=10V
⢠30V/2.0A, RDS(ON)=90mâ¦@VGS=4.5V
⢠Super high density cell design for extremely low RDS(ON)
⢠Exceptional on-resistance and maximum DC current capability
Application
⢠Power Management in Note book
⢠Portable Equipment
⢠Battery Powered System
⢠DC/DC Converter
⢠Load Switch
⢠DSC
⢠LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (TJ=150â)
TA=25â
TA=70â
ID
3.2 A
2.6
Pulsed Drain Current
IDM
10 A
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25â
TA=70â
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
IS
PD
TJ
TSTG
RθJA
1.25 A
1.25 W
0.8
150 OC
-55/150 OC
100 OC/W
VER 1.2 1
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