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| ACE1557B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1557B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1557B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This
device is suitable for use as a load switch or in PWM applications.
Features
ï· 30V/5A =-30V
ï· RDS(ON)=29mΩ @ VGS=10V
ï· RDS(ON)=41mΩ @ VGS=4.5V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
Continuous Drain Current * AC
TA=25â
TA=70â
VGSS
ID
±20 V
5
A
4.1
Pulsed Drain Current * B
IDM
20 A
Power Dissipation
TA=25â
TA=70â
2
PD
W
1.6
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
SOT-223
Ordering information
ACE1557B XX + H
Halogen - free
Pb - free
XM : SOT-223
VER 1.2 1
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