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| ACE1551B Datasheet, PDF (1/7 Pages) ACE Technology Co., LTD. – N-Channel Enhancement Mode Field Effect Transistor | |||
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ACE1551B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1551B combines advanced trench MOSFET technology with a low resistance package to
provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,
Pagers.
Features
ï· VDS =20V
ï· ID=0.7A
ï· RDS(ON)<360mΩ (VGS=4.5V)
ï· RDS(ON)<420mΩ (VGS=2.5V)
ï· RDS(ON)<560mΩ (VGS=1.8V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
Continuous Drain Current * AC
TA=25â
TA=70â
VGSS
ID
±12 V
700
mA
560
Pulsed Drain Current * B
IDM
1A
Power Dissipation
TA=25â
TA=70â
0.27
PD
W
0.16
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
SOT-723
VER 1.2 1
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