 English |
|
|
|
|
|
|
|
| ACE1543B Datasheet, PDF (1/5 Pages) ACE Technology Co., LTD. – P-Channel Enhancement Mode Field Effect Transistor | |||
| |||
|
ACE1543B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
ï· VDS(V) =-30V
ï· ID=-4.5A
ï· RDS(ON)=68mΩ @ VGS=-10V
ï· RDS(ON)=83mΩ @ VGS=-4.5V
ï· High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
Continuous Drain Current * AC
TA=25â
TA=70â
VGSS
ID
±20 V
-4.5
A
-3.6
Pulsed Drain Current * B
IDM
-20 A
Power Dissipation
TA=25â
PD
2W
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
SOT-223
VER 1.2 1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese